Publications

Kobashi, K., K. Nishimura, K. Miyata, Y. Kawate, J. T. Glass, and B. E. Williams. “Surface morphology and defect structures in microwave cvd diamond films.” Proceedings of SPIE the International Society for Optical Engineering 969 (January 17, 1989): 159–67. https://doi.org/10.1117/12.948165.

Williams, B. E., and J. T. Glass. “Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures.” Journal of Materials Research 4, no. 2 (January 1, 1989): 373–84. https://doi.org/10.1557/JMR.1989.0373.

Williams, B. E., J. T. Glass, R. F. Davis, K. Kobashi, and K. L. More. “Microstructural characterization of diamond thin films.” Proceedings - The Electrochemical Society 89, no. 12 (1989): 202.

Glass, J. T., G. L. J. Cahen, and G. E. Stoner. “Effect of phosphoric acid concentration on electrocatalysis.” Journal of the Electrochemical Society 136, no. 3 (1989): 656–60. https://doi.org/10.1149/1.2096705.

Kong, H. S., J. T. Glass, and R. F. Davis. “Growth rate, surface morphology, and defect microstructures of β—SiC films chemically vapor deposited on 6H—SiC substrates.” Journal of Materials Research 4, no. 1 (January 1, 1989): 204–14. https://doi.org/10.1557/JMR.1989.0204.

Kong, H. S., J. T. Glass, and R. F. Davis. “Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates.” Journal of Applied Physics 64, no. 5 (December 1, 1988): 2672–79. https://doi.org/10.1063/1.341608.

Kong, H. S., B. L. Jiang, J. T. Glass, G. A. Rozgonyi, and K. L. More. “An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates.” Journal of Applied Physics 63, no. 8 (December 1, 1988): 2645–50. https://doi.org/10.1063/1.341004.

Edmond, J. A., J. Ryu, J. T. Glass, and R. F. Davis. “ELECTRICAL CONTACTS TO BETA SILICON CARBIDE THIN FILMS.” Journal of the Electrochemical Society 135, no. 2 (1988): 359–62.

Kong, H. S., Y. C. Wang, J. T. Glass, and R. F. Davis. “The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films.” J. Mater. Res. (USA) 3, no. 3 (1988): 521–30.

Williams, B. E., J. T. Glass, R. F. Davis, K. Kobashi, and T. Horiuchi. “Structural and chemical characterization of diamond films and diamond-substrate interfaces.” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA) 6, no. 3 (1988): 1819–20. https://doi.org/10.1116/1.575261.

Nemanich, R. J., J. T. Glass, G. Lucovsky, and R. E. Shroder. “Raman scattering characterization of carbon bonding in diamond and diamondlike thin films.” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA) 6, no. 3 (1988): 1783–87. https://doi.org/10.1116/1.575297.

Glass, J. T, Cahen, G. L, and Jr. “The electrochemical stability and calculated free energies of PtCr alloys.” J. Electrochem. Soc. (USA) 135, no. 7 (1988): 1650–58.

Davis, R. F., Z. Sitar, B. E. Williams, H. S. Kong, H. J. Kim, J. W. Palmour, J. A. Edmond, J. Ryu, J. T. Glass, and CH Jr Carter. “Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide.” Materials Science & Engineering B: Solid-State Materials for Advanced Technology B1, no. 1 (1988): 77–104. https://doi.org/10.1016/0921-5107(88)90032-3.

Glass, J. T., B. E. Williams, and R. F. Davis. “Chemical vapor deposition and characterization of diamond films grown via microwave plasma enhanced CVD.” Proc. SPIE - Int. Soc. Opt. Eng. (USA) 877 (1988): 56–63.

Kim, H. J., H. Kong, J. A. Edmond, J. Ryu, J. Palmour, Carter C. H. Jr, J. T. Glass, and R. F. Davis. “Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films.” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA) 6, no. 3 (1988): 1954–56. https://doi.org/10.1116/1.575214.

Bumgarner, J. W., H. S. Kong, H. J. Kim, J. W. Palmour, J. A. Edmond, J. T. Glass, and F. Davis Robert. “MONOCRYSTALLINE beta -SIC SEMICONDUCTOR THIN FILMS: EPITAXIAL GROWTH, DOPING, AND FET DEVICE DEVELOPMENT.” Proceedings Electronic Components and Technology Conference, January 1, 1988, 342–49.

Kong, H. S., J. W. Palmour, J. T. Glass, and R. F. Davis. “Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition.” Applied Physics Letters 51, no. 6 (December 1, 1987): 442–44. https://doi.org/10.1063/1.98416.

Kim, H. J., J. A. Edmond, J. Ryu, H. Kong, C. H. Carter, J. T. Glass, and R. F. Davis. “Epitaxial growth, doping and analytical characterization of monocrystalline beta-SiC semiconductor thin flims.” International SAMPE Symposium and Exhibition Proceedings 1 (December 1, 1987): 370–81.

Davis, R. F., H. J. Kim, H. Kong, J. A. Edmond, and J. T. Glass. “EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS.” Journal of Electronic Materials 16, no. 4 (July 1987): A23–A23.

Glass, J. T., G. L. C. Jr, and G. E. Stoner. “EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PtCr ALLOYS.” Journal of the Electrochemical Society 134, no. 1 (1987): 58–65.

Kong, H. S., J. T. Glass, and R. F. Davis. “Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition.” Applied Physics Letters 49, no. 17 (December 1, 1986): 1074–76. https://doi.org/10.1063/1.97479.

Glass, J. T., G. L. Cahen, and G. E. Stoner. “DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES AT PtCr ALLOYS.” Proceedings the Electrochemical Society 86–10 (December 1, 1986): 231–56.

Glass, J. T., G. L. Cahen, and G. E. Stoner. “DETERMINATION OF THE EFFECT OF METALLURGICAL VARIABLES ON THE ELECTROCATALYTIC PROPERTIES OF PTCR ALLOYS.” Journal of the Electrochemical Society 133, no. 3 (March 1986): C120–C120.

Glass, J. T., and R. E. Green. “ACOUSTIC EMISSION DURING DEFORMATION AND FRACTURE OF THREE NAVAL ALLOY STEELS.” Materials Evaluation 43, no. 7 (June 1, 1985): 864–72.

Glass, J. “Monolayer Graphene-Insulator-Semiconductor Emitter for Large-Area Electron Lithography.” Applied Physics Letters, n.d.